Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips

arXiv:2310.14665v3 Announce Type: replace
Abstract: We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real HBM2 DRAM chips in two different FPGA boards shows that (1) the read disturbance vulnerability significantly varies between different HBM2 chips and between different components (e.g., 3D-stacked channels) inside a chip, (2) DRAM rows at the end and in the middle of a …

arxiv bandwidth chips cs.ar cs.cr dram high memory study